Enhanced extrinsic magnetoresistance in La2/3Sr1/3MnO3 articial grain boundaries induced by ion implantation

被引：3

作者：

Zhang, M. J.

Li, J.

Peng, Z. H.

Li, S. L. ^{[1
]}

Zheng, D. N.

Jin, A. Z.

Gu, C. Z.

Li, R. Y.

Liu, C. C.

机构：

[1] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Lab Microfabricat, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Beijing Jingyi Century Automat Equipment Co Ltd, Beijing 100078, Peoples R China

[4] Hebei Univ Technol, Inst Informat Funct Mat, Tianjin 300130, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 316卷 / 01期

基金：

中国国家自然科学基金;

关键词：

colossal magnetoresistance; magnetic properties; impurity implantation;

D O I：

10.1016/j.jmmm.2007.02.207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resistance of polycrystalline divalent-ion-doped LaMnO3 has been shown to be highly sensitive to low magnetic fields. To enable direct study of the properties of isolated grain boundaries, we developed a new method to form artificial boundaries in manganite thin films. Metal slits about 70nm in width were printed by 30KV focused Ga ion beam nanolithography on a 4 mu m La2/3Sr1/3MnO3 bridge, and the materials in these slits were then irradiated by accelerated H-2(+) ions. Using this method, magnetoresistance (MR) > 8% and > 16% were, respectively, obtained at 150 and at 10K in a magnetic field of 1T. This technique is very promising in terms of its simplicity and flexibility of fabrication and has the potential for high-density integration. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：L1 / L4

页数：4

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