Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics

被引：30
作者：
Gorchichko, Mariia [1 ]
Cao, Yanrong [2 ]
Zhang, En Xia [1 ]
Yan, Dawei [3 ]
Gong, Huiqi [4 ,5 ]
Zhao, Simeng E. [1 ]
Wang, Pan [1 ]
Jiang, Rong [4 ,6 ]
Liang, Chundong [4 ,7 ]
Fleetwood, Daniel M. [1 ]
Schrimpf, Ronald D. [1 ]
Reed, Robert A. [1 ]
Linten, Dimitri [8 ]
机构：
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA
[2] Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Peoples R China
[3] Jiangnan Univ, Dept Elect Engn, Wuxi 214122, Jiangsu, Peoples R China
[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37212 USA
[5] Micron Technol, Boise, ID 83707 USA
[6] Intel Corp, Hillsboro, OR 97124 USA
[7] Maxim Integrated Inc, San Jose, CA 95134 USA
[8] IMEC, B-3001 Leuven, Belgium
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 01期
基金：
中国国家自然科学基金;
关键词：
FinFET; low-frequency noise; random telegraph noise (RTN); silicon on insulator (SOI); total-ionizing dose (TID); 1/F NOISE; BIAS DEPENDENCE; FIN-WIDTH; 130; NM; CHARGE; SILICON; MOS; DEFECTS; MOSFETS; DEGRADATION;
D O I：
10.1109/TNS.2019.2960815
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise (RTN) is observed in smaller devices due to prominent individual defects.
引用
收藏
页码：245 / 252
页数：8
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