Novel In0.49Ga0.52P/(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy

被引：2

作者：

Chen, JX ^{[1
]}

Li, AZ ^{[1
]}

Yang, QK ^{[1
]}

Lin, C ^{[1
]}

Ren, YC ^{[1
]}

Jin, SR ^{[1
]}

Li, CC ^{[1
]}

Qi, M ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 193卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0022-0248(98)00479-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In0.49Ga0.51P/(In)GaAs/GaAs heterostructure is an excellent candidate for two dimensional hole gas (2DHG) system as it had a large valence band offset ratio. In this paper we reported the growth of In0.49Ga0.51P/(In)GaAs/GaAs p-type modulation doped heterostructures by gas source molecular beam epitaxy. Electrical and low temperature photoluminescence properties of structures with different p-channels and doping methods were investigated. Hole mobilities of 131 cm(2)/V s at 300 K and 2020 cm(2)/V a at 77 K for a homogeneity doped GaAs channel structure were obtained. By using delta-doping technique, hole mobilities of 191 cm(2)/V s at 300 K and 2831 cm(2)/V s at 77 K were achieved. The Hall mobilities could be still slightly enhanced when using pseudomorphic InGaAs channel instead of GaAs channel. The change of hole mobilities were qualitatively explained by the ionized impurity scattering mechanism. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：28 / 32

页数：5

共 13 条

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[2]

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