Silicon single electron memory cell

被引：68

作者：

Stone, NJ ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 15期

关键词：

D O I：

10.1063/1.122401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A compact single-electron memory cell has been fabricated in silicon using a process that is compatible with complementary metal-oxide-semiconductor circuit fabrication. The device is based on the Coulomb blockade effect observed in highly doped silicon nanowires. The circuit shows clear memory operation with a >100 mV gap between "0" and "1" levels when tested at a temperature of 4.2 K. The response of the circuit to write and erase pulse sequences is also presented. (C) 1998 American Institute of Physics. [S0003-6951(98)02041-5].

引用

页码：2134 / 2136

页数：3

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