Oscillatory Mass Transport in Vapor-Liquid-Solid Growth of Sapphire Nanowires

被引:161
作者
Oh, Sang Ho [1 ,2 ]
Chisholm, Matthew F. [3 ]
Kauffmann, Yaron [4 ]
Kaplan, Wayne D. [4 ]
Luo, Weidong [3 ,5 ]
Ruehle, Manfred [6 ]
Scheu, Christina [7 ,8 ]
机构
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Natl Ctr Nanomat Technol, Pohang 790784, South Korea
[3] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[4] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel
[5] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[6] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[7] Univ Munich, Dept Chem, D-81377 Munich, Germany
[8] Univ Munich, Ctr NanoSci, D-81377 Munich, Germany
关键词
SURFACE-DIFFUSION; ALUMINUM; INTERFACES; TEMPERATURE; DYNAMICS;
D O I
10.1126/science.1190596
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In vapor-liquid-solid (VLS) growth, the liquid phase plays a pivotal role in mediating mass transport from the vapor source to the growth front of a nanowire. Such transport often takes place through the liquid phase. However, we observed by in situ transmission electron microscopy a different behavior for self-catalytic VLS growth of sapphire nanowires. The growth occurs in a layer-by-layer fashion and is accomplished by interfacial diffusion of oxygen through the ordered liquid aluminum atoms. Oscillatory growth and dissolution reactions at the top rim of the nanowires occur and supply the oxygen required to grow a new (0006) sapphire layer. A periodic modulation of the VLS triple-junction configuration accompanies these oscillatory reactions.
引用
收藏
页码:489 / 493
页数:5
相关论文
共 25 条
[1]   Wetting dynamics - Spreading of metallic drops [J].
Chatain, D ;
Carter, WC .
NATURE MATERIALS, 2004, 3 (12) :843-845
[2]   FUNDAMENTAL ASPECTS OF VLS GROWTH [J].
GIVARGIZOV, EI .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :20-30
[3]   Periodically twinned nanowires and polytypic nanobelts of ZnS: The role of mass diffusion in vapor-liquid-solid growth [J].
Hao, Yufeng ;
Meng, Guowen ;
Wang, Zhong Lin ;
Ye, Changhui ;
Zhang, Lide .
NANO LETTERS, 2006, 6 (08) :1650-1655
[4]   Ordering at solid-liquid interfaces between dissimilar materials [J].
Hashibon, A ;
Adler, J ;
Finnis, MW ;
Kaplan, WD .
INTERFACE SCIENCE, 2001, 9 (3-4) :175-181
[5]   Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth [J].
Hofmann, Stephan ;
Sharma, Renu ;
Wirth, Christoph T. ;
Cervantes-Sodi, Felipe ;
Ducati, Caterina ;
Kasama, Takeshi ;
Dunin-Borkowski, Rafal E. ;
Drucker, Jeff ;
Bennett, Peter ;
Robertson, John .
NATURE MATERIALS, 2008, 7 (05) :372-375
[6]   Role of surface diffusion in chemical beam epitaxy of InAs nanowires [J].
Jensen, LE ;
Björk, MT ;
Jeppesen, S ;
Persson, AI ;
Ohlsson, BJ ;
Samuelson, L .
NANO LETTERS, 2004, 4 (10) :1961-1964
[7]   Structural order in liquids induced by interfaces with crystals [J].
Kaplan, Wayne D. ;
Kauffmann, Yaron .
ANNUAL REVIEW OF MATERIALS RESEARCH, 2006, 36 :1-48
[8]   Germanium nanowire growth below the eutectic temperature [J].
Kodambaka, S. ;
Tersoff, J. ;
Reuter, M. C. ;
Ross, F. M. .
SCIENCE, 2007, 316 (5825) :729-732
[9]   Crystallographic alignment of high-density gallium nitride nanowire arrays [J].
Kuykendall, T ;
Pauzauskie, PJ ;
Zhang, YF ;
Goldberger, J ;
Sirbuly, D ;
Denlinger, J ;
Yang, PD .
NATURE MATERIALS, 2004, 3 (08) :524-528
[10]   WETTABILITY OF MONOCRYSTALLINE ALUMINA BY ALUMINUM BETWEEN ITS MELTING-POINT AND 1273-K [J].
LAURENT, V ;
CHATAIN, D ;
CHATILLON, C ;
EUSTATHOPOULOS, N .
ACTA METALLURGICA, 1988, 36 (07) :1797-1803