High-speed waveguide-integrated Ge/Si avalanche photodetector

被引：5

作者：

Cong, Hui ^{[1
]}

Xue, Chunlai ^{[1
]}

Liu, Zhi ^{[1
]}

Li, Chuanbo ^{[1
]}

Cheng, Buwen ^{[1
]}

Wang, Qiming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2016年 / 25卷 / 05期

基金：

中国国家自然科学基金;

关键词：

waveguide; germanium; photodetector; BANDWIDTH PRODUCT;

D O I：

10.1088/1674-1056/25/5/058503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Waveguide-integrated Ge/Si heterostructure avalanche photodetectors (APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-charge-multiplication (SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage (V-b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 mu A at 90% of the V-b. The device with a 10-mu m length and 7-mu m width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-mu m-length Ge region, gain-bandwidth product achieves 325 GHz.

引用

页数：4

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