Electrical conductivity relaxation in thin-film yttria-stabilized zirconia

被引：70
|
作者：
Rivera, A [1 ]
Santamaría, J [1 ]
León, C [1 ]
机构：
[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Aplicada 3, GFMC, E-28040 Madrid, Spain
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 05期
关键词：
D O I：
10.1063/1.1343852
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on complex admittance measurements on ZrO2:Y2O3 (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking at grain boundaries. We have examined low-temperature (close to room temperature) regime dominated by association of oxygen vacancies. Complex admittance analyzed in terms of the modulus formalism supplies information on correlation effects in ion motion and allows obtaining an association energy for the oxygen vacancies of 0.45 eV, in agreement with previous theoretical calculations. (C) 2001 American Institute of Physics.
引用
收藏
页码：610 / 612
页数：3
相关论文
共 50 条
  • [1] Electrical conductivity relaxation in thin-film yttria-stabilized zirconia
    Rivera, A.
    Santamaria, J.
    Leon, C.
    1600, American Institute of Physics Inc. (78):
  • [2] Thin-film yttria-stabilized tetragonal zirconia
    Liaw, BY
    Rocheleau, RE
    Gao, QH
    SOLID STATE IONICS, 1996, 92 (1-2) : 85 - 89
  • [3] Selective growth of diamond thin-film employing yttria-stabilized zirconia thin-film mask
    Maki, Tetsuro
    Hou, Gen Liang
    Kobayashi, Takeshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (07): : 3227 - 3230
  • [4] SELECTIVE GROWTH OF DIAMOND THIN-FILM EMPLOYING YTTRIA-STABILIZED ZIRCONIA THIN-FILM MASK
    MAKI, T
    HOU, GL
    KOBAYASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (07): : 3227 - 3230
  • [5] MICROSTRUCTURE OF YTTRIA-STABILIZED ZIRCONIA OVERCOATS FOR THIN-FILM RECORDING MEDIA
    KAO, AS
    HWANG, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04): : 3289 - 3294
  • [6] Electrical conductivity of yttria-stabilized zirconia with cobalt addition
    Silva, G. C. T.
    Muccillo, E. N. S.
    SOLID STATE IONICS, 2009, 180 (11-13) : 835 - 838
  • [7] Theoretical investigation of diffusion and electrical properties of yttria-stabilized zirconia thin film
    Le Thu Lam
    Vu Van Hung
    Dang Thanh Hai
    Ho Khac Hieu
    THIN SOLID FILMS, 2021, 732
  • [8] Microstructure and Electrical Conductivity of Yttria-Stabilized Zirconia with Lithium Addition
    Muccillo, E. N. S.
    Campos, C. S.
    Muccillo, R.
    BRAZILIAN CERAMIC CONFERENCE 57, 2014, 798-799 : 413 - 418
  • [9] Electrical conductivity and oxygen semipermeability of terbia and yttria-stabilized zirconia
    Cao, G.Z., 1600, Chapman & Hall Ltd, London, United Kingdom (24):
  • [10] Fast densification and electrical conductivity of yttria-stabilized zirconia nanoceramics
    Li, Q.
    Xia, T.
    Liu, X. D.
    Ma, X. F.
    Meng, J.
    Cao, X. Q.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 138 (01): : 78 - 83
12345