Ambipolar field-effect transistors based on fullerene peapods

被引：0

作者：

Guo, A ^{[1
]}

Fu, YY ^{[1
]}

Guan, LH ^{[1
]}

Wang, XF ^{[1
]}

Shi, ZJ ^{[1
]}

Gu, ZN ^{[1
]}

Zhang, X ^{[1
]}

机构：

[1] Peking Univ, Dept Microelect, Beijing 100871, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

fullerene peapod; field-effect transistor; ambipolar; hysteresis;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical transport properties of C-70 and C-60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C-70 and C-60 fullerene peapods. Most of the fullerene peapod-FETs exhibit ambipolar characteristics at room temperature in air. The origin of ambipolar behavior is also qualitatively discussed. The ambipolar FETs based on fullerene peapods exhibit hysteresis effect in their electrical characteristics.

引用

页码：644 / 647

页数：4

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