Band Structures and Two-photon Absorption of ZnGeP2 and AgGaS2 Crystals

被引：0
|
作者：
Cheng Wen-Dan [1 ]
Xie Zhi [1 ]
Wu Dong-Sheng [1 ]
Huang Shu-Ping [1 ]
Wang Jin-Yun [1 ]
Zhang Hao [1 ]
机构：
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
来源：
CHINESE JOURNAL OF STRUCTURAL CHEMISTRY | 2010年 / 29卷 / 06期
基金：
中国国家自然科学基金;
关键词：
DFT; band structure; TPA; electron transition; DIFFERENCE-FREQUENCY-GENERATION; ZINC-GERMANIUM PHOSPHIDE; 1.25; MU-M; 2ND-HARMONIC GENERATION; RANGE; POWER; SEMICONDUCTORS; AMPLIFIER; DAMAGE;
D O I：
暂无
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Band structure and bonding properties have been investigated in terms of periodic density functional theory (DFT) method, and two-photon absorption (TPA) spectra have been simulated by two-band model for ZnGeP2 and AgGaS2 crystals. It has been predicted that the AgGaS2 crystal has a wider window of nonlinear transmission, and the laser pumping energy larger than 1.02 and 1.35 eV will lead to deleterious TPA of higher nonlinear effect for ZnGeP2 and AgGaS2 crystals, respectively. Electron origin of TPA for them is also discussed.
引用
收藏
页码：950 / 956
页数：7
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