Effect of Zinc/Tin Composition Ratio on the Operational Stability of Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors

被引：59

作者：

Kim, Yong-Hoon ^{[1
]}

Han, Jeong-In ^{[2
]}

Park, Sung Kyu ^{[3
]}

机构：

[1] Korea Elect Technol Inst, Flexible Display Res Ctr, Songnam 463816, South Korea

[2] Dongguk Univ, Dept Chem & Biochem Engn, Seoul 100715, South Korea

[3] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Composition ratio; operation stability; solution process; thin-film transistor (TFT); zinc-tin-oxide (ZTO); BIAS STRESS; TEMPERATURE; PERFORMANCE; FABRICATION;

D O I：

10.1109/LED.2011.2171913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Variation of Zn:Sn atomic composition ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and operational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn: Sn atomic composition ratio in ZTO films can improve the device performance and operational stability of the solution-processed ZTO TFTs.

引用

页码：50 / 52

页数：3

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