High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure

被引：2

作者：

Albrecht, Alexander R. ^{[1
]}

Rotter, Thomas J. ^{[1
]}

Hains, Christopher P. ^{[1
]}

Stintz, Andreas ^{[1
]}

Xin, Guofeng ^{[2
]}

Wang, Tsuei-Lian ^{[3
]}

Kaneda, Yushi ^{[3
]}

Moloney, Jerome V. ^{[3
]}

Malloy, Kevin J. ^{[1
]}

Balakrishnan, Ganesh ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[3] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

来源：

VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) | 2011年 / 7919卷

关键词：

InAs quantum dot; VECSEL; SDL; resonant periodic gain; SEMICONDUCTOR; LASER;

D O I：

10.1117/12.874321

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

引用

页数：6

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