A 40 Gb/s Monolithically Integrated Linear Photonic Receiver in a 0.25 μm BiCMOS SiGe:C Technology

被引：64

作者：

Awny, Ahmed ^{[1
]}

Nagulapalli, Rajasekhar ^{[1
]}

Winzer, Georg ^{[1
]}

Kroh, Marcel ^{[1
]}

Micusik, Daniel ^{[1
]}

Lischke, Stefan ^{[1
]}

Knoll, Dieter ^{[1
]}

Fischer, Gunter ^{[1
]}

Kissinger, Dietmar ^{[1
,2
]}

Ulusoy, Ahmet Cagri ^{[1
]}

Zimmermann, Lars ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

[2] Tech Univ Berlin, D-10623 Berlin, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 07期

关键词：

Integrated photonics; SiGe; transimpedance amplifier;

D O I：

10.1109/LMWC.2015.2430615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the first 40 Gb/s monolithically integrated silicon photonics linear receiver (Rx) comprising a germanium photodiode (Ge-PD) and a linear transimpedance amplifier (TIA). Measured optical-electrical (O/E) 3 dB bandwidth (BW) of the Rx is 31 GHz. At 40 Gb/s, the Rx achieves a sensitivity of -3 dBm average optical input power with BER of 2.5 x 10(-11). It operates at lambda = 1.55 mu m wavelength, uses 3.3 and 3.7 V power supplies, dissipates 275 mW(pp), of power, provides maximum differential output amplitude of, and occupies an area of 3.2 mm(2) The presented receiver achieves the highest bit rate among the published work in monolithically integrated silicon photonics receivers.

引用

页码：469 / 471

页数：3

共 50 条

[21] A 50 Gb/s TIA in 0.25 μm SiGe:C BiCMOS in Folded Cascode Architecture with pnp HBTs
Lopez, I. Garcia
Rito, P.
Awny, A.
Heinemann, B.
Kissinger, D.
Ulusoy, A. C.
2016 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2016, : 9 - 12
[22] 10 to 40 GHz Superheterodyne Receiver Frontend in 0.13 μm SiGe BiCMOS Technology
Abdeen, Hebat-Allah Yehia
Yuan, Shuai
Schumacher, Hermann
Ziegler, Volker
Meusling, Askold
Feldle, Peter
2016 GERMAN MICROWAVE CONFERENCE (GEMIC), 2016, : 341 - 344
[23] 10 to 40 GHz Superheterodyne Receiver Frontend in 0.13 μm SiGe BiCMOS Technology
Abdeen, Hebat-Allah Yehia
Yuan, Shuai
Schumacher, Hermann
Ziegler, Volker
Meusling, Askold
Feldle, Peter
FREQUENZ, 2017, 71 (3-4) : 151 - 160
[24] LDMOSFET and SiGe:C HBT integrated in a 0.25μm BiCMOS technology for RF-PA applications.
Muller, D
Giry, A
Arnaud, C
Arricastres, C
Sommet, R
Szelag, B
Monroy, A
Pache, D
PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 168 - 171
[25] Low-Power, Ultra-compact, Fully-differential 40Gbps Direct Detection Receiver in 0.25μm Photonic BiCMOS SiGe Technology
Gudyriev, Scrgiy
Scheytt, J. Christoph
Meister, Stefan
Meuer, Christian
Knoll, Dieter
Lischke, Stefan
Zimmermann, Lars
2016 IEEE 13TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2016, : 178 - 179
[26] 112 Gb/s PAM-4 Silicon Photonics Receiver Integrated With SiGe-BiCMOS Linear TIA
Okamoto, Daisuke
Suzuki, Yasuyuki
Takemura, Koichi
Fujikata, Junichi
Nakamura, Takahiro
IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 34 (03) : 189 - 192
[27] A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology
Zimmermann, H
Heide, T
IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (07) : 711 - 713
[28] A Four-Antenna 802.11a Receiver integrated in 0.25 μm SiGe BiCMOS with Spatial Weighting
Wickert, Michael
Mayer, Uwe
Eickhoff, Ralf
Ettinger, Frank
FREQUENZ, 2012, 66 (11-12) : 331 - 337
[29] A low-noise monolithically integrated. 1.5 Gb/s optical receiver in 0.6-μp BiCMOS technology
Swoboda, R
Zimmermann, H
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (02) : 419 - 424
[30] Fully Differential, 40 Gb/s Regulated Cascode Transimpedance Amplifier in 0.13 μm SiGe BiCMOS Technology
Amid, S. Bashiri
Plett, C.
Schvan, P.
2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, : 33 - 36

← 1 2 3 4 5 →