A 40 Gb/s Monolithically Integrated Linear Photonic Receiver in a 0.25 μm BiCMOS SiGe:C Technology

被引：64
|
作者：
Awny, Ahmed [1 ]
Nagulapalli, Rajasekhar [1 ]
Winzer, Georg [1 ]
Kroh, Marcel [1 ]
Micusik, Daniel [1 ]
Lischke, Stefan [1 ]
Knoll, Dieter [1 ]
Fischer, Gunter [1 ]
Kissinger, Dietmar [1 ,2 ]
Ulusoy, Ahmet Cagri [1 ]
Zimmermann, Lars [1 ]
机构：
[1] IHP, D-15236 Frankfurt, Oder, Germany
[2] Tech Univ Berlin, D-10623 Berlin, Germany
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 07期
关键词：
Integrated photonics; SiGe; transimpedance amplifier;
D O I：
10.1109/LMWC.2015.2430615
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents the first 40 Gb/s monolithically integrated silicon photonics linear receiver (Rx) comprising a germanium photodiode (Ge-PD) and a linear transimpedance amplifier (TIA). Measured optical-electrical (O/E) 3 dB bandwidth (BW) of the Rx is 31 GHz. At 40 Gb/s, the Rx achieves a sensitivity of -3 dBm average optical input power with BER of 2.5 x 10(-11). It operates at lambda = 1.55 mu m wavelength, uses 3.3 and 3.7 V power supplies, dissipates 275 mW(pp), of power, provides maximum differential output amplitude of, and occupies an area of 3.2 mm(2) The presented receiver achieves the highest bit rate among the published work in monolithically integrated silicon photonics receivers.
引用
收藏
页码：469 / 471
页数：3
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