A 4-Channel V-Band Beamformer Featuring a Switchless PALNA for Scalable Phased Array Systems

被引：8

作者：

Gadallah, Ahmed ^{[1
]}

Franzese, Aniello ^{[1
]}

Eissa, Mohamed Hussein ^{[1
]}

Drenkhahn, Kevin E. ^{[2
]}

Kissinger, Dietmar ^{[3
]}

Malignaggi, Andrea ^{[1
]}

机构：

[1] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Germany

[2] TU Ilmenau, Ilmenau, Germany

[3] Ulm Univ, Inst Elect Devices & Circuits, Ulm, Germany

来源：

2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2021年

关键词：

V-band; beamformer; phased-array; switchless; SIGE BICMOS;

D O I：

10.1109/IMS19712.2021.9574827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 4-channel bidirectional V-band beamformer adopting a switchless PALNA in a SiGe:C 130nm BiCMOS technology, featuring f(t)/f(max) of 250/340 GHz. Using such technique saves the silicon area occupied by the RF switches avoiding their lossy effect on PAs outputs and LNAs inputs. The designed beamformer contains PAs, LNAs, vector modulators with active balun, passive power dividers/combiners and an integrated SPI interface. On-wafer measurements show that the fabricated beamformer covers the band from 57 GHz to 66GHz with an average small signal gain of 18 dB and 9 dB all over the channels in both Tx and Rx modes respectively. Furthermore, the beamformer achieves an OP1dB of 10.5dBm in Tx mode and an IP1dB of -27dBm in Rx mode. The circuit occupies 11mm(2) and consumes 230mW and 100mW per channel in Tx and Rx modes respectively.

引用

页码：839 / 841

页数：3

共 8 条

[1]

Drenkhahn KE, 2021, EUR MICROW INTEGRAT, P65

[2] A V-Band Miniaturized Bidirectional Switchless PALNA in SiGe:C BiCMOS Technology [J].