Series SiC MOSFETs with Single Gate Driver Based on Capacitance Coupling and Passive Snubber Circuits

This paper improves existing series topologies of MOSFETs with single gate driver and a new topology suitable for multiple series MOSFETs is proposed. In the topology, two small charging capacitors are used to drive MOSFET instead of the traditional bias power supply, which can simplify topology and increase the power density and reliability. Then the static and dynamic states of the circuit are analyzed and the working principle is expounded. After that, LTspice simulation is used to prove the feasibility of topology. Finally, the driving circuit and parameter design are presented, and the experimental results are given to verify the performance of the circuit.