Dependence of Gate Leakage Current on Efficacy of Gate Field Plate in AlGaN/GaN HEMT

被引：1

作者：

Chanchal ^{[1
,2
]}

Visvkarma, Ajay Kumar ^{[2
]}

Malik, Amit ^{[2
]}

Laishram, Robert ^{[2
]}

Rawal, D. S. ^{[2
]}

Saxena, Manoj ^{[3
]}

机构：

[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India

[2] Solid State Phys Lab, New Delhi 110054, India

[3] Univ Delhi, Deen Dayal Upadhyaya Coll, Dept Elect, New Delhi 110078, India

来源：

PROCEEDINGS OF 3RD IEEE CONFERENCE ON VLSI DEVICE, CIRCUIT AND SYSTEM (IEEE VLSI DCS 2022) | 2022年

关键词：

Field Plate; GaN HEMT; gate reverse leakage; breakdown voltage; hump in the breakdown;

D O I：

10.1109/VLSIDCS53788.2022.9811463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN HEMTs finds applications in Radio Frequency (RF) and high-power device and sensing applications. Several types of GaN HEMT device structures have been studied and are being used in various forms. In this article, a comparative study of gate field plated device with a conventional GaN HEMT device has been studied. A close relationship in gate leakage current with off-state breakdown pattern has been observed. The field plate starts working after a certain rise in the gate-drain electric field creating a hump in off-state breakdown characteristic. In low gate leakage device this pattern is absent signifying the effectiveness of gate field plate in fix voltage range.

引用

页码：265 / 268

页数：4

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