Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

被引：48

作者：

Chen, Kevin J. ^{[1
]}

Yang, Shu ^{[1
]}

Tang, Zhikai ^{[1
]}

Huang, Sen ^{[1
]}

Lu, Yunyou ^{[1
]}

Jiang, Qimeng ^{[1
]}

Liu, Shenghou ^{[1
]}

Liu, Cheng ^{[1
]}

Li, Baikui ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 05期

关键词：

III-nitride; interface engineering; MIS-HEMTs; nitridation interfacial-layer; V-TH instability; PLASMA NITRIDATION; CURRENT COLLAPSE; ALGAN/GAN HEMTS; ALN PASSIVATION; IMPACT; PERFORMANCE; TRANSISTORS; TRAPS; LAYER; HFETS;

D O I：

10.1002/pssa.201431712

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effective interface engineering techniques in III-nitride heterojunction power devices, aiming at yielding high V-TH stability in insulated-gate devices and suppressed current collapse in high-voltage switching operation, are of critical significance to enhance device performance and reliability. In this work, we present an interface enhancement technology featuring in situ low-damage NH3/Ar/N-2 pre-gate plasma treatment prior to the ALD-Al2O3 deposition for high-performance III-nitride MIS-HEMTs. It is manifest that this technology can effectively remove the native oxide while forming a monocrystal-like nitridation interfacial-layer (NIL) on the III-nitride surface. The Al2O3(NIL)/GaN/AlGaN/GaN MIS-heterostructures with high-quality interface exhibit well-behaved electrical characteristics, including a small subthreshold swing of approximate to 64mV/dec, a small hysteresis of approximate to 0.09V, tiny f/T dispersions in the C-V characteristics, and low interface trap density of approximate to 1x10(12)-6x10(12)cm(-2)eV(-1). Cross-sectional TEM micrograph of the Al2O3/III-nitride gate stack with a monocrystal-like nitridation interfacial-layer (NIL).

引用

页码：1059 / 1065

页数：7

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