Temperature-dependent distributions of activation energies in amorphous semiconductors

被引：11
|
作者：
Arkhipov, VI
Adriaenssens, GJ
Yan, BJ
机构：
[1] Moscow Engineering Physics Institute, Moscow 115409
[2] Department of Physics, University of Utah, Salt Lake City
[3] Laboratorium voor Halfgeleiderfysica, Katholieke Universiteit Leuven, B-3001 Heverlee-Leuven
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 07期
关键词：
disordered systems; semiconductors; electronic states (localized); noise; photoconductivity and photovoltaics;
D O I：
10.1016/0038-1098(96)00441-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A model is presented which explains recently reported temperature dependences of the density of state (DOS) distributions in amorphous materials. The model incorporates temporal fluctuations of the localized-state energies and predicts shallower DOS functions with local maxima and sharp edges for lower temperatures. These predictions are shown to be in good agreement with existing experimental data. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码：471 / 475
页数：5
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