Diamond synthesized at room temperature by pulsed laser deposition in vacuum

Here we show that diamond particles were formed on (100) silicon substrates by XeCl (308 nm, 20 ns) laser ablation using a urea doped camphoric carbon target in vacuum. The substrate temperature and the pressure were kept At room temperature (25degreesC) and (4-5) x 10(-5) Tort, respectively without feeding any gases during the deposition. Raman spectroscopy analysis confirmed the diamond cubic structure of the crystals by the presence of a sharp peak at 1337.8 cm(-1). One broad peak is also observed in the spectra centered at 1550 cm(-1), which is attributed to the G-peak in the film.