Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation

被引:13
作者
Kumar, Rahul [1 ,2 ]
Maidaniuk, Yurii [1 ]
Saha, Samir K. [1 ]
Mazur, Yuriy I. [1 ]
Salamo, Gregory J. [1 ,2 ]
机构
[1] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
基金
美国国家科学基金会;
关键词
OPTICAL-PROPERTIES; GROWTH; TEMPERATURE; GAAS(001); THICKNESS; DENSITY; EPITAXY; ORIGIN; SIZE;
D O I
10.1063/1.5139400
中图分类号
O59 [应用物理学];
学科分类号
摘要
InAs quantum dots (QDs) have been grown on a GaAs (001) substrate in the subcritical region of InAs coverage for transition from a 2-dimensional (2D) to a 3-dimensional growth mode. Evolution of QDs and the corresponding wetting layer (WL) with InAs coverage has been investigated. Under specific growth conditions, quantum dot formation was observed only in samples where InAs coverage is more than 1.48 ML. The QD density increases sharply with InAs deposition initially but slows down with increased coverage. Photoluminescence (PL) shows the existence of a third peak, other than QD and WL peaks, at the low energy side of the WL peak, which is named the precursor peak. Evidence is presented supporting the theory that this peak is due to 2D InAs islands on a monolayer of InAs, which are small enough to localize excitons. Meanwhile, the WL peak is due to larger InAs islands under high compressive strain. During QD formation, the WL peak energy increases with the increase in InAs deposition. This is due to the sudden transfer of material from the bigger size of InAs islands to the QD. Our results show that the QD, WL, and precursor peaks coexist near the onset of QD formation. The power dependence of the three PL peaks is evident, which supports to our conclusion. Published under license by AIP Publishing.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
    Zhang, Hongyi
    Chen, Yonghai
    Zhou, Guanyu
    Tang, Chenguang
    Wang, Zhanguo
    NANOSCALE RESEARCH LETTERS, 2012, 7
  • [2] Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
    Zhou, X. L.
    Chen, Y. H.
    Li, T. F.
    Zhou, G. Y.
    Zhang, H. Y.
    Ye, X. L.
    Xu, Bo
    Wang, Z. G.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
  • [3] Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage
    Sengupta, S.
    Shah, S. Y.
    Halder, N.
    Chakrabarti, S.
    OPTO-ELECTRONICS REVIEW, 2010, 18 (03) : 295 - 299
  • [4] Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells
    Kong, Lingmin
    Sun, Wei
    Feng, Zhe Chuan
    Xie, Sheng
    Zhou, Yunqing
    Wang, Rui
    Zhang, Cunxi
    Zong, Zhaocun
    Wang, Hongxia
    Qiao, Qian
    Wu, Zhengyun
    THIN SOLID FILMS, 2014, 562 : 440 - 444
  • [5] The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects
    Westwood, DI
    Sobiesierski, Z
    Matthai, CC
    APPLIED SURFACE SCIENCE, 1999, 144-45 : 484 - 487
  • [6] Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
    Tongbram, B.
    Ahmad, A.
    Sengupta, S.
    Mandal, A.
    Singhal, J.
    Balgarkashi, A.
    Chakrabarti, S.
    JOURNAL OF LUMINESCENCE, 2017, 192 : 89 - 97
  • [7] Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices
    Asano, Tetsuya
    Fang, Zhaoqiang
    Madhukar, Anupam
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
  • [8] Annealing effects on faceting of InAs/GaAs(001) quantum dots
    Placidi, E.
    Della Pia, A.
    Arciprete, F.
    APPLIED PHYSICS LETTERS, 2009, 94 (02)
  • [9] Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructure
    Makhijani, Rahul M.
    Chakrabarti, S.
    Singh, Vijay A.
    JOURNAL OF LUMINESCENCE, 2013, 136 : 401 - 406
  • [10] Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots
    Tisbi, E.
    Latini, V.
    Patella, F.
    Placidi, E.
    Arciprete, F.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (23)