Metal induced gap states on Pt-modified Ge(001) surfaces

被引：3

作者：

Oncel, N. ^{[1
]}

van Beek, W. J. ^{[1
]}

Poelsema, B. ^{[1
]}

Zandvliet, H. J. W. ^{[1
]}

机构：

[1] Univ Twente, Inst Nanotechnol, MESA, NL-7500 AE Enschede, Netherlands

来源：

NEW JOURNAL OF PHYSICS | 2007年 / 9卷

关键词：

D O I：

10.1088/1367-2630/9/12/449

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting metallic and semiconducting terraces. Spatially resolved STS measurements reveal that the higher lying metallic terraces induce electronic states in the band gap region of the lower lying semiconducting terraces.

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页数：7

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