Grating gated FET's as narrowband, tunable terahertz detectors

被引：4

作者：

Shaner, EA ^{[1
]}

Wanke, MC ^{[1
]}

Lee, M ^{[1
]}

Reno, JL ^{[1
]}

Allen, SJ ^{[1
]}

Peralta, XG ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

TERAHERTZ FOR MILITARY AND SECURITY APPLICATIONS III | 2005年 / 5790卷

关键词：

field effect transistors; high mobility; 2-dimensional plasmons; terahertz; focal plane arrays; bolometers; heterodyne mixers;

D O I：

10.1117/12.603497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Grating gated field effect transistors (FETs) are potentially important as electronically tunable terahertz detectors with spectral bandwidths of the order of 50 GHz. Their utility depends on being able to 1) use the intrinsic high speed in a heterodyne mixer or 2) sacrifice speed for sufficient sensitivity to be an effective incoherent detector. In its present form the grating, gated FET will support IF frequencies up to similar to 10 GHz, an acceptable bandwidth for most heterodyne applications. By separating the resonant plasmon absorption from the responsivity mechanism, it appears that a tuned, narrow terahertz spectral band bolometer can be fabricated with NEP similar to 10(-11) watts/root Hz and response times of the order of 30 msecs, useful in a passive multispectral terahertz imaging system.

引用

页码：116 / 122

页数：7

共 4 条

[1]

ARIZIN G, COMMUNICATION

[2]

Lee MT, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1881796, 10.1063/1.1851606]

[3] Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors [J].