Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

被引:15
作者
Wang, You-Yi [1 ]
Wu, Ya-Dong [2 ]
Peng, Wei [1 ]
Song, Yong-Hong [2 ]
Wang, Bao [3 ]
Wu, Chun-Yan [1 ]
Lu, Yang [2 ]
机构
[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
[2] Hefei Univ Technol, Biomed & Environm Interdisciplinary Res Ctr, Sch Chem & Chem Engn, Hefei 230009, Anhui, Peoples R China
[3] Chinese Acad Sci, Inst Proc Engn, State Key Lab Biochem Engn, Beijing 100190, Peoples R China
关键词
CHEMICAL-VAPOR-DEPOSITION; SCHOTTKY JUNCTION; HIGH-SPEED; TRANSPARENT ELECTRODES; LIGHT PHOTODETECTOR; LOW-NOISE; HETEROJUNCTION; PERFORMANCE; ARRAYS; DEVICES;
D O I
10.1039/c8nr01553h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Near infrared light (NIR) photodetectors based on one-dimensional semiconductor nanowires have generated considerable interest due to their practical application in versatile fields. We present a facile yet efficient approach to rationally integrating KCu7S4 semiconductor nanowires by the Langmuir-Blodgett (LB) technique. A self-powered near infrared (NIR) light photodetector is fabricated by transferring a close-packed KCu7S4 nanowire monolayer to the surface of a silicon wafer. The as-fabricated Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array exhibits splendid photovoltaic performance when illuminated by NIR light, allowing the detection of NIR light without an exterior power supply. The photodetector exhibits a high sensitivity to NIR light (980 nm, 295.3 mu W cm(-2)) with responsivity (R) 15 mA W-1 and detectivity (D*) 2.15 x 10(12) cm Hz(1/2) W-1. Significantly, the device shows the capability to work under high pulsed light irradiation up to 50 kHz with a high-speed response (response time iota(r) 7.4 mu s and recovery time iota(f) 8.6 mu s). This facilitates the fabrication of low-cost and high-speed photodetectors and integrated optoelectronic sensor circuitry.
引用
收藏
页码:18502 / 18509
页数:9
相关论文
共 45 条
[1]   Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector [J].
Boruah, Buddha Deka ;
Mukherjee, Anwesha ;
Misra, Abha .
NANOTECHNOLOGY, 2016, 27 (09)
[2]   Single-crystalline ZnTe nanowires for application as high-performance Green/Ultraviolet photodetector [J].
Cao, Y. L. ;
Liu, Z. T. ;
Chen, L. M. ;
Tang, Y. B. ;
Luo, L. B. ;
Jie, J. S. ;
Zhang, W. J. ;
Lee, S. T. ;
Lee, C. S. .
OPTICS EXPRESS, 2011, 19 (07) :6100-6108
[3]   Large-Area Alignment of Tungsten Oxide Nanowires over Flat and Patterned Substrates for Room-Temperature Gas Sensing [J].
Cheng, Wei ;
Ju, Yanrui ;
Payamyar, Payam ;
Primc, Darinka ;
Rao, Jingyi ;
Willa, Christoph ;
Koziej, Dorota ;
Niederberger, Markus .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2015, 54 (01) :340-344
[4]   Charge storage in KCu7S4 as redox active material for a flexible all-solid-state supercapacitor [J].
Dai, Shuge ;
Xu, Weina ;
Xi, Yi ;
Wang, Mingjun ;
Gu, Xiao ;
Guo, Donglin ;
Hu, Chenguo .
NANO ENERGY, 2016, 19 :363-372
[5]   Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity [J].
Das, K. ;
Mukherjee, S. ;
Manna, S. ;
Ray, S. K. ;
Raychaudhuri, A. K. .
NANOSCALE, 2014, 6 (19) :11232-11239
[6]   25th Anniversary Article: Semiconductor Nanowires Synthesis, Characterization, and Applications [J].
Dasgupta, Neil P. ;
Sun, Jianwei ;
Liu, Chong ;
Brittman, Sarah ;
Andrews, Sean C. ;
Lim, Jongwoo ;
Gao, Hanwei ;
Yan, Ruoxue ;
Yang, Peidong .
ADVANCED MATERIALS, 2014, 26 (14) :2137-2184
[7]   Solution-processed hybrid perovskite photodetectors with high detectivity [J].
Dou, Letian ;
Yang, Yang ;
You, Jingbi ;
Hong, Ziruo ;
Chang, Wei-Hsuan ;
Li, Gang ;
Yang, Yang .
NATURE COMMUNICATIONS, 2014, 5
[8]   Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection [J].
Geng, Xiangshun ;
Yu, Yongqiang ;
Zhou, Xiaoli ;
Wang, Chunde ;
Xu, Kewei ;
Zhang, Yan ;
Wu, Chunyan ;
Wang, Li ;
Jiang, Yang ;
Yang, Qing .
NANO RESEARCH, 2016, 9 (09) :2641-2651
[9]   Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].
Gudiksen, MS ;
Lauhon, LJ ;
Wang, J ;
Smith, DC ;
Lieber, CM .
NATURE, 2002, 415 (6872) :617-620
[10]   Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays [J].
Han, Ning ;
Yang, Zai-xing ;
Wang, Fengyun ;
Yip, SenPo ;
Li, Dapan ;
Hung, Tak Fu ;
Chen, Yunfa ;
Ho, Johnny C. .
ACS NANO, 2016, 10 (06) :6283-6290