The influence of interdiffusion on the binding energy of excitons in InxGa1-xNyAs1-y/GaAs quantum wells

被引：8
作者：
Ryczko, K [1 ]
Sek, G [1 ]
Misiewicz, J [1 ]
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 37卷 / 04期
关键词：
InGaNAs/GaAs quantum wells; exciton binding energy; interdiffusion;
D O I：
10.1016/j.spmi.2005.01.003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of a technologically important effect of interdiffusion of atoms between well and barrier layers on the ground state exciton binding energy has been investigated as a function of the well width, for different quaternary material compositions. The migration of the group III atoms through the quantum well interfaces has been assumed to be dominant. Significant changes of the exciton binding energy depending on the diffusion length have been observed. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：273 / 280
页数：8
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