Effect of charge carrier blocking, surface resistance and electric field distribution on electric field poling of nonlinear optic polymers

被引:0
|
作者
Ouchen, Fahima [1 ,2 ]
Heckman, Emily [3 ]
Dalton, Larry [4 ]
Kajzar, Francois [5 ]
Rau, Ileana [5 ]
Grote, James [1 ]
机构
[1] US Air Force, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[2] Univ Dayton, Res Inst, Dayton, OH 45469 USA
[3] US Air Force, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA
[4] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[5] Univ Politehn Bucuresti, Bucharest, Romania
来源
基金
美国国家科学基金会;
关键词
nonlinear optic polymer; opto-electronic; electro-optic modulator; electro-optic coefficient; guanine; nucleobase; bathocuproine; interfacial; buffer; surface resistance; electric field distribution; charge carrier blocking;
D O I
10.1117/12.2260596
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In our previous work we introduced charge carrier blocking layers to realize an increase in the poling field and, hence, an increase in the nonlinearity, or electro-optic (EO) coefficient, r(33), of the nonlinear optic (NLO) polymer disperse red 1: polymethylmethacrylate (DR1: PMMA). In addition, we not only achieved higher poling voltages, which resulted in higher r(33)s at these higher poling voltages, but we also observed higher r(33)s when both the samples with and without the charge carrier blocking layers were poled at the same poling voltage. We attributed that primarily to a decrease in the surface resistance. Here we provide a more detailed analysis and propose that the increase may be attributed not only to surface resistance but a combination of lower surface resistance, more uniform electric field distribution and charge carrier blocking, provided by the charge carrier blocking layers.
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页数:7
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