Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser

被引：15

作者：

Dixon, S ^{[1
]}

Edwards, C ^{[1
]}

Palmer, SB ^{[1
]}

Schindel, DW ^{[1
]}

机构：

[1] QUEENS UNIV,DEPT PHYS,KINGSTON,ON K7L 3N6,CANADA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1996年 / 29卷 / 05期

关键词：

D O I：

10.1088/0022-3727/29/5/033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of a Q-switched Nd:YAG laser as an ultrasonic source in a single-crystal silicon sample has been studied using a wide-bandwidth modified Michelson interferometer as an absolute displacement sensor. At low power densities the source is an extended buried thermoelastic source; however, the thermal expansion is less than the contraction due to the negative pressure coefficient of the energy gap and the illuminated region contracts rather than expands. Above a certain power density, ablation occurs, giving rise to a localized normal force at the surface of the sample.

引用

页码：1345 / 1348

页数：4

共 14 条

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[2]

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[3]

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[4]

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