Nucleation and growth of δ-Bi2O3 thin films on c-sapphire by means of chemical vapour deposition under atmospheric pressure

被引：13

作者：

Takeyama, T

Takahashi, N

Nakamura, T

Itoh, S

机构：

[1] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[2] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[3] Asahi Glass Co Ltd, Res Ctr, Yokohama, Kanagawa 2218755, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 277卷 / 1-4期

关键词：

crystal morphology; growth model; chemical vapour deposition processes; bismuth compounds; oxide;

D O I：

10.1016/j.jcrysgro.2005.02.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Cubic bismuth oxide (delta-Bi2O3) films were grown on a c-sapphire substrate under atmospheric pressure by means of halide chemical vapour deposition using Bil(3) and O-2 as starting materials. The nucleation and evolution of the thin film growth was investigated by varying the growth temperature, and [O-2]/[BiI3] molar ratio. The growth process of delta-Bi2O3 was found to be strongly dependent on both [0,]/[Bil3] ratio and growth temperature. SEM observation revealed that nucleation and island formation are initiated in the first 2min. As the growth time increases, the size of the islands increases and then the islands start coalescing. Finally, the islands converge and film growth starts. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：485 / 489

页数：5

共 14 条

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