Time dependent resistance change of amorphous phase in phase-change nonvolatile memories

被引：2

作者：

Yoon, Sung-Min ^{[1
]}

Choi, Kyu-Jeong ^{[1
]}

Lee, Nam-Yeal ^{[1
]}

Lee, Seung-Yun ^{[1
]}

Park, Young-Sam ^{[1
]}

Yu, Byoung-Gon ^{[1
]}

Park, Tae-Jin ^{[2
]}

Choi, Se-Young ^{[2
]}

机构：

[1] Elect & Telecommun Res Inst Daejeon, Taejon 305350, South Korea

[2] Yonsei Univ, Sch Mat Sci & Engn, Seoul 120749, South Korea

来源：

INTEGRATED FERROELECTRICS | 2007年 / 93卷

关键词：

phase-change; nonvolatile memory; Ge2Sb2Te5; amorphous; PRAM;

D O I：

10.1080/10584580701756151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the realization of reliable nonvolatile phase-change memory operations, it is very important to understand the long-term behaviors of memory states with different resistance values. We investigated the time-dependent behaviors of RESET resistance states (R-R) for the fabricated memory devices using Sn-doped GST, in which Sn amounts were varied to control the initial values of R-R. It was found that the transient variations of R-R showed an increasing trend with time, and that their behaviors were closely related to the microstructure of amorphous phase in the phase-change material.

引用

页码：83 / 89

页数：7

共 11 条

[1]

IELMINI D, 2005, INT IEDM

[2] A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation [J].

Kang, Sangbeom ;

Cho, Woo Yeong ;

Cho, Beak-Hyung ;

Lee, Kwang-Jin ;

Lee, Chang-Soo ;

Oh, Hyung-Rok ;

Choi, Byung-Gil ;

Wang, Qi ;

Kim, Hye-Jin ;

Park, Mu-Hui ;

Ro, Yn Hwan ;

Kim, Suyeon ;

Ha, Choong-Duk ;

Kim, Ki-Sung ;

Kim, Young-Ran ;

Kim, Du-Eung ;

Kwak, Choong-Keun ;

Byun, Hyun-Geun ;

Jeong, Gitae ;

Jeong, Hongsik ;

Kim, Kinam ;

Shin, YunSueng .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (01) :210-218

[3] Low-cost and nanoscale non-volatile memory concept for future silicon chips [J].

Lankhorst, MHR ;

Ketelaars, BWSMM ;

Wolters, RAM .

NATURE MATERIALS, 2005, 4 (04) :347-352

[4]

MATSUI Y, 2006, INT IEDM

[5] Phase transition characteristics and device performance of Sn-doped Ge2Sb2Te5 in phase change random access memory [J].

Park, Tae Jin ;

Kim, Dae Hyun ;

Yoon, Sung Min ;

Choi, Kyu Jeong ;

Lee, Nam Yeal ;

Yu, Byoung Gon ;

Choi, Se Young .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (46-50) :L1273-L1276

[6]

PELLIZZER F, 2006, S VLSI TECH, P15

[7] Reliability study of phase-change nonvolatile memories [J].

Pirovano, A ;

Redaelli, A ;

Pellizzer, F ;

Ottogalli, F ;

Tosi, M ;

Ielmini, D ;

Lacaita, AL ;

Bez, R .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (03) :422-427

[8] Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials [J].

Pirovano, A ;

Lacaita, AL ;

Pellizzer, F ;

Kostylev, SA ;

Benvenuti, A ;

Bez, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (05) :714-719

[9] Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements [J].

Privitera, S ;

Rimini, E ;

Zonca, R .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3044-3046

[10] Intrinsic data retention in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time [J].

Redaelli, Andrea ;

Ielmini, Daniele ;

Russo, Ugo ;

Lacaita, Andrea L. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (12) :3040-3046

← 1 2 →