High thermal stability of the amorphous structure of GexNbTaTiZr (x=0.5, 1) high-entropy alloys

被引：37

作者：

Cheng, Chun-Yang ^{[1
]}

Yeh, Jien-Wei ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

MATERIALS LETTERS | 2016年 / 181卷

关键词：

Amorphous materials; Physical vapour deposition; Sputtering; High-entropy alloys; Thermal stability; Thin films;

D O I：

10.1016/j.matlet.2016.06.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two GexNbTaTiZr (x=0.5, 1) compositions were designed to show excellent thermal stability in amorphous structure. Both amorphous structures in the deposited thin film can be retained after one-hour vacuum annealing at 700 degrees C and 750 degrees C, respectively. Thermodynamic, topological and kinetic factors governing this excellent thermal stability are discussed via high entropy effect, atomic size differences and sluggish diffusion phenomena. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：223 / 226

页数：4

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