Shot noise in graphene

被引：123

作者：

DiCarlo, L. ^{[1
]}

Williams, J. R. ^{[2
]}

Zhang, Yiming ^{[1
]}

McClure, D. T. ^{[1
]}

Marcus, C. M. ^{[1
]}

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.100.156801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report measurements of current noise in single-layer and multilayer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/- 10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multilayer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theories for shot noise in ballistic and disordered graphene.

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