Thermoluminescence properties of SrAl2O4:Eu sputtered films with long phosphorescence

被引：0

作者：

Tsutai, I ^{[1
]}

Kamimura, T ^{[1
]}

Kato, K ^{[1
]}

Kaneko, F ^{[1
]}

Shinbo, K ^{[1
]}

Ohta, M ^{[1
]}

Kawakami, T ^{[1
]}

机构：

[1] Niigata Univ, Grad Sch Sci & Technol, Niigata 9502181, Japan

来源：

1998 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ISEIM.1998.741682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SrAl2O4 activated with Eu, one of new long phosphorescent materials with high brightness, was deposited on Si substrates using an RF sputtering technique with, facing targets. The photoluminescence (PL) was not observed for the as-deposited SrAl2O4:Eu films. However, a PL peak at about 520 nm was observed after annealing in a reducing H-2+Ar gas. The thermoluminescence (TL) measurements were carried out, and the Lifetimes of the phosphorescence were obtained from the peaks. TL spectra in higher temperature region which contribute for the long phosphorescence, were examined by the partial heating technique to evaluate the distributed trap depths and lifetimes. The results in this work are useful for the development of phosphors.

引用

页码：51 / 54

页数：4

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