Solvent-free bottom-up patterning of zeolitic imidazolate frameworks

被引:35
|
作者
Miao, Yurun [1 ,2 ]
Lee, Dennis T. [1 ,2 ]
de Mello, Matheus Dorneles [3 ,4 ]
Ahmad, Mueed [3 ,5 ]
Abdel-Rahman, Mohammed K. [6 ]
Eckhert, Patrick M. [6 ]
Boscoboinik, J. Anibal [3 ,5 ]
Fairbrother, D. Howard [6 ]
Tsapatsis, Michael [1 ,2 ,7 ]
机构
[1] Johns Hopkins Univ, Dept Chem & Biomol Engn, Baltimore, MD 21218 USA
[2] Johns Hopkins Univ, Inst NanoBioTechnol, Baltimore, MD 21218 USA
[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[4] Univ Delaware, Catalysis Ctr Energy Innovat, Newark, DE USA
[5] SUNY Stony Brook, Dept Mat Sci & Chem Engn, Stony Brook, NY 11794 USA
[6] Johns Hopkins Univ, Dept Chem, Charles & 34Th St, Baltimore, MD 21218 USA
[7] Johns Hopkins Univ, Appl Phys Lab, Laurel, MD 20723 USA
关键词
METAL-ORGANIC FRAMEWORKS; THIN-FILMS; COPPER CORROSION; TOP-DOWN; DEPOSITION; GROWTH; FABRICATION; NUCLEATION; MEMBRANES;
D O I
10.1038/s41467-022-28050-z
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Patterning metal-organic frameworks (MOFs) at submicrometer scale is a crucial yet challenging task for their integration in miniaturized devices. Here we report an electron beam (e-beam) assisted, bottom-up approach for patterning of two MOFs, zeolitic imidazolate frameworks (ZIF), ZIF-8 and ZIF-67. A mild pretreatment of metal oxide precursors with linker vapor leads to the sensitization of the oxide surface to e-beam irradiation, effectively inhibiting subsequent conversion of the oxide to ZIFs in irradiated areas, while ZIF growth in non-irradiated areas is not affected. Well-resolved patterns with features down to the scale of 100 nm can be achieved. This developer-free, all-vapor phase technique will facilitate the incorporation of MOFs in micro- and nanofabrication processes. There is a long-standing interest in the development of patterning process for porous materials. Here, the authors report a solvent-free bottom-up approach for the patterning of zeolitic imidazolate frameworks; well-resolved patterns with features down to the scale of 100 nm can be achieved.
引用
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页数:8
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