Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

被引:7
|
作者
Xue, QK
Xue, QZ
Kuwano, S
Nakayama, K
Sakurai, T
Tsong, IST
Qiu, XG
Segawa, Y
机构
[1] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[4] Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan
基金
美国国家科学基金会;
关键词
high resolution X-ray diffraction; surface structure; molecular beam epitaxy; nitrides; semiconducting III-V materials;
D O I
10.1016/S0022-0248(01)01048-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report on the surface reconstructions on the basal planes of wurtzite GaN. Depending on the surface polarity, two distinct classes of reconstructions form. The Ga-polar surface displays the Ga fluid-1 x 1, 10 x 10, 5 root3 x 2 root 13, 5 x 5, 4 x 4, and 2 x 2, and the (0 0 0 (1) over bar) N-polar surface the 6 x 8, 6 x 6, root7 x root7 and 2 x 3 with decreasing surface Ga coverage, We will show that their structure is consistent with a simple Ga-adatom-based scheme. Crystalline structure and optical properties of the GaN epilayers are examined by high resolution X-ray diffraction and photoluminescence, and the results reveal a strong relation between the threading-dislocation density and the intensities of both near-band transition at 3.427 eV and yellow luminescence at 2.16 eV. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:41 / 47
页数:7
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