Intrinsic thermally compensated field sensor based on single magnetic tunnel junctions

被引：7

作者：

Malinowski, G ^{[1
]}

Hehn, M ^{[1
]}

Montaigne, F ^{[1
]}

Jouguelet, E ^{[1
]}

Schuhl, A ^{[1
]}

机构：

[1] CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.1646220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The association of an antiferromagnetic material with a ferromagnetic material in an exchange coupled bilayer is used as a detection layer in a tunnel magnetoresistive sensor. The magnetic response is shown to be reversible and linear depending on the field range to be measured. Both tunnel magnetoresistance and exchange field decrease linearly with the temperature and lead to temperature independent sensor sensibility. (C) 2004 American Institute of Physics.

引用

页码：1204 / 1206

页数：3

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