Efficiency enhancement for SiN-based light emitting device through introduction of Si nanocones in emitting layer

被引：4

作者：

Guo, Yanqing ^{[1
]}

Lin, Zhenxu ^{[1
]}

Huang, Rui ^{[1
]}

Lin, Zewen ^{[1
]}

Song, Chao ^{[1
]}

Song, Jie ^{[1
]}

Wang, Xiang ^{[1
]}

机构：

[1] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Guangdong, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2015年 / 5卷 / 05期

基金：

中国国家自然科学基金;

关键词：

SILICON NANOCRYSTALS; QUANTUM DOTS; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; EMISSION; NITRIDE; FILMS;

D O I：

10.1364/OME.5.000969

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride-based light-emitting devices were fabricated with a SiNx emitting layer grown on annealed Si film of dense nano-crystalline cones. Comparative studies revealed that the patterned SiNx emitting layer, with embedding nanocrystalline Si cones and a rough surface morphology of its own, manifests a much enhanced, even doubled at sufficiently large injected current density, electroluminescence efficiency. Both the increased light-extraction capability and the effective hole-blocking by the presence of Si nanocones, the latter is favorable for the balance of carrier injection in emitting layer, are responsible for this remarkable efficiency enhancement. The current work established an alternative approach toward the fabrication of more efficient SiN-based light-emitting devices. (C)2015 Optical Society of America

引用

页码：969 / 976

页数：8

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