Comparative study of GaN based light emitting devices grown on sapphire and GaN substrates

被引：0

作者：

Figge, S ^{[1
]}

Dennemarck, J ^{[1
]}

Alexe, G ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

来源：

GAN, AIN, INN AND THEIR ALLOYS | 2005年 / 831卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The homoeptaxial growth of GaN based devices has advantages against the heteroepitaxial realization on substrates such as sapphire or SiC, since heteroepitaxy implies a lot of problems like lattice mismatch, different thermal expansion coefficients, and needs an extensive optimization of the growth at the heterointerface. In this paper we will discuss GaN based light emitting devices grown by homoepitaxy in comparison to devices grown on sapphire. We will show the differences in device performance, device processing and the influence of the thermal resistivity on the devices.

引用

页码：715 / 720

页数：6

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