A general synthetic route to III-V compound semiconductor nanowires

被引：0
|
作者：
Shi, WS
Zheng, YF
Wang, N
Lee, CS
Lee, ST
机构：
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Film, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
来源：
ADVANCED MATERIALS | 2001年 / 13卷 / 08期
关键词：
D O I：
10.1002/1521-4095(200104)13:8<591::AID-ADMA591>3.0.CO;2-#
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The oxide-assisted method for the synthesis of gallium arsenide nanowires reported here has the advantage of requiring neither a metal catalyst nor a template, which simplifies the purification and subsequent application of the wires. An SEM image of the nanowires is shown in the Figure. The results of a TEM examination are reported and a growth mechanism is proposed.
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页码：591 / +
页数：5
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