Improved accuracy in nano beam electron diffraction

被引：12

作者：

Beche, A. ^{[1
]}

Clement, L. ^{[2
]}

Rouviere, J-L ^{[1
]}

机构：

[1] CEA, INAC, SP2M, LEMMA, 17 Rue Martyrs, F-38054 Grenoble 9, France

[2] ST Microelect, F-38920 Crolles, France

来源：

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷

关键词：

STRAINED-SI LAYERS; RELAXATION;

D O I：

10.1088/1742-6596/209/1/012063

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Nano beam electron diffraction (NBD or NBED) is applied on a well controlled sample in order to evaluate the limit of the technique to measure strain Measurements are realised on a 27nm thick Si-0 Ge-7(0) (3) layer embedded in a silicon matrix, with a TITAN microscope working at 300kV Using a standard condenser aperture of 50 mu m, a probe size diameter of 2 7 nm is obtained and a strain accuracy of 6x10(-4) (mean root square, rms) is achieved NBED patterns are acquired along a [110] direction and the bidimensionnal strain in the (110) plane is measured Finite element simulations are carried out to check experimental results and reveal that strain relaxation and probe averaging in a 170nm thick TEM lamella reduces strain by 15%

引用

页数：4

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