Improved accuracy in nano beam electron diffraction

被引：12

作者：

Beche, A. ^{[1
]}

Clement, L. ^{[2
]}

Rouviere, J-L ^{[1
]}

机构：

[1] CEA, INAC, SP2M, LEMMA, 17 Rue Martyrs, F-38054 Grenoble 9, France

[2] ST Microelect, F-38920 Crolles, France

来源：

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷

关键词：

STRAINED-SI LAYERS; RELAXATION;

D O I：

10.1088/1742-6596/209/1/012063

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Nano beam electron diffraction (NBD or NBED) is applied on a well controlled sample in order to evaluate the limit of the technique to measure strain Measurements are realised on a 27nm thick Si-0 Ge-7(0) (3) layer embedded in a silicon matrix, with a TITAN microscope working at 300kV Using a standard condenser aperture of 50 mu m, a probe size diameter of 2 7 nm is obtained and a strain accuracy of 6x10(-4) (mean root square, rms) is achieved NBED patterns are acquired along a [110] direction and the bidimensionnal strain in the (110) plane is measured Finite element simulations are carried out to check experimental results and reveal that strain relaxation and probe averaging in a 170nm thick TEM lamella reduces strain by 15%

引用

页数：4

共 15 条

[1] Electron diffraction with ten nanometer beam size for strain analysis of nanodevices [J].

Armigliato, A. ;

Frabboni, S. ;

Gazzadi, G. C. .

APPLIED PHYSICS LETTERS, 2008, 93 (16)

[2]

Auth Chris, 2008, Intel Technology Journal, V12, P77

[3] DIRECT MEASUREMENT OF LOCAL LATTICE-DISTORTIONS IN STRAINED LAYER STRUCTURES BY HREM [J].

BIERWOLF, R ;

HOHENSTEIN, M ;

PHILLIPP, F ;

BRANDT, O ;

CROOK, GE ;

PLOOG, K .

ULTRAMICROSCOPY, 1993, 49 (1-4) :273-285

[4] Strain measurements by convergent-beam electron diffraction:: The importance of stress relaxation in lamella preparations [J].

Clément, L ;

Pantel, R ;

Kwakman, LFT ;

Rouvière, JL .

APPLIED PHYSICS LETTERS, 2004, 85 (04) :651-653

[5]

HARTMANN J, 2008, ENGINEERING, V154, P76

[6] Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers [J].

Houdellier, F. ;

Roucau, C. ;

Clement, L. ;

Rouviere, J. L. ;

Casanove, M. J. .

ULTRAMICROSCOPY, 2006, 106 (10) :951-959

[7] Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy [J].

Huee, Florian ;

Hytch, Martin ;

Bender, Hugo ;

Houdellier, Florent ;

Claverie, Alain .

PHYSICAL REVIEW LETTERS, 2008, 100 (15)

[8] Nanoscale holographic interferometry for strain measurements in electronic devices [J].

Hytch, Martin ;

Houdellier, Florent ;

Hue, Florian ;

Snoeck, Etienne .

NATURE, 2008, 453 (7198) :1086-U5

[9] Quantitative measurement of displacement and strain fields from HREM micrographs [J].

Hytch, MJ ;

Snoeck, E ;

Kilaas, R .

ULTRAMICROSCOPY, 1998, 74 (03) :131-146

[10] PROCEEDINGS OF LAKE TAHOE WORKSHOP ON ELECTRON-ENERGY LOSS SPECTROSCOPY - AUGUST 18-22, 1990 - FOREWORD [J].

KRIVANEK, OL .

MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1991, 2 (2-3) :R3-R4

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