Application of RF LDMOS power transistors for 2.2GHz wideband-CDMA

被引：0
|
作者：
Wood, A [1 ]
Brakensiek, W [1 ]
机构：
[1] Motorola Inc, Wireless Infrastruct Syst Div, Semicond Prod Sector, Phoenix, AZ 85008 USA
来源：
1998 IEEE RADIO AND WIRELESS CONFERENCE PROCEEDINGS - RAWCON 98 | 1998年
关键词：
D O I：
10.1109/RAWCON.1998.709198
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wideband CDMA was conceived to carry high bit rate data and video information in addition to voice traffic. The IMT2000 standard has adopted the 2.11 to 2.17 GHz band for this service, posing the design challenges of higher operating frequency band than the PCS 1.8-1.99GHz and wider modulation bandwidth for the signals. This paper describes the results for a 60 Watt single-ended and a 120 Watt push-pull RF LDMOS device characterized with W-CDMA signals in the IMT2000 frequency band.
引用
收藏
页码：309 / 312
页数：4
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