Application of RF LDMOS power transistors for 2.2GHz wideband-CDMA

被引：0
|
作者：
Wood, A [1 ]
Brakensiek, W [1 ]
机构：
[1] Motorola Inc, Wireless Infrastruct Syst Div, Semicond Prod Sector, Phoenix, AZ 85008 USA
来源：
1998 IEEE RADIO AND WIRELESS CONFERENCE PROCEEDINGS - RAWCON 98 | 1998年
关键词：
D O I：
10.1109/RAWCON.1998.709198
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wideband CDMA was conceived to carry high bit rate data and video information in addition to voice traffic. The IMT2000 standard has adopted the 2.11 to 2.17 GHz band for this service, posing the design challenges of higher operating frequency band than the PCS 1.8-1.99GHz and wider modulation bandwidth for the signals. This paper describes the results for a 60 Watt single-ended and a 120 Watt push-pull RF LDMOS device characterized with W-CDMA signals in the IMT2000 frequency band.
引用
收藏
页码：309 / 312
页数：4
相关论文
共 50 条
  • [21] Experimental results of outer-loop transmission power control using Wideband-CDMA for IMT-2000
    Niida, S
    Suzuki, T
    Takeuchi, Y
    2000 IEEE 51ST VEHICULAR TECHNOLOGY CONFERENCE, PROCEEDINGS, VOLS 1-3, 2000, : 775 - 779
  • [22] New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
    Ren, CH
    Liang, YC
    Xu, SM
    IEEE 2000 TENCON PROCEEDINGS, VOLS I-III: INTELLIGENT SYSTEMS AND TECHNOLOGIES FOR THE NEW MILLENNIUM, 2000, : B29 - B34
  • [23] A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
    Everett, John P.
    Kearney, Michael J.
    Rueda, Hernan
    Johnson, Eric M.
    Aaen, Peter H.
    Wood, John
    Snowden, Christopher M.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) : 3081 - 3088
  • [24] Device Physics and EM Simulation Based Modeling Methodology for LDMOS RF Power Transistors
    Lamey, Dan
    Zhang, Lei
    Rueda, Hernan
    Kabir, Humayun
    Sweeney, Rick
    Kim, Kevin
    2017 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION FOR RF, MICROWAVE, AND TERAHERTZ APPLICATIONS (NEMO), 2017, : 79 - 81
  • [25] Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors
    Ankarcrona, J
    Eklund, KH
    Vestling, L
    Olsson, J
    SOLID-STATE ELECTRONICS, 2004, 48 (05) : 789 - 797
  • [26] Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors
    Cortes, I.
    Fernandez-Martinez, P.
    Flores, D.
    Hidalgo, S.
    Rebollo, J.
    MICROELECTRONICS RELIABILITY, 2008, 48 (02) : 173 - 180
  • [27] Improved electrical and thermal performance of ultra-thin RF LDMOS power transistors
    Herbsommer, JA
    Safar, H
    Brown, W
    Lau, EW
    Farrell, DP
    Lopez, O
    Terefenko, G
    Gammel, P
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 213 - 216
  • [28] Analysis, Design, and Evaluation of LDMOS FETs for RF Power Applications up to 6 GHz
    Gruner, Daniel
    Sorge, Roland
    Bengtsson, Olof
    Al Tanany, Ahmed
    Boeck, Georg
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (12) : 4022 - 4030
  • [29] PSPICE model of the power LDMOS transistor for radio frequency applications in the 1.8-2.2 GHz Band
    Kassmi, K
    Nolhier, N
    Rossel, P
    Tranduc, H
    Kouakou, P
    Gola, P
    El Hitmy, M
    Maimouni, R
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1999, 5 (02): : 171 - 178
  • [30] Wideband RF Power Meter with Frequency Range up to 10 GHz
    Al-Zubi, Muneer M.
    2015 JIEEEC 9TH JORDANIAN INTERNATIONAL ELECTRICAL AND ELECTRONICS ENGINEERING CONFERENCE (JIEEEC), 2015,
12345