On the mechanism of plasma enhanced dielectric deposition charging damage

被引：21

作者：

Cheung, KP ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 2000年

关键词：

D O I：

10.1109/PPID.2000.870658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photoconduction is shown to be the mechanism for plasma charging damage during plasma enhanced dielectric deposition. Details of the process, including polarity effect are explained. The recently measured oxide photoconductivity is shown to be in agreement with expectation. The main cause of severe charging damage is the low level of photoconduction coupled with high processing temperature.

引用

页码：161 / 163

页数：3

共 12 条

[1] CONSTANT CURRENT STRESS BREAKDOWN IN ULTRATHIN SIO2-FILMS [J].