Large negative magnetoresistance in a ferromagnetic shape memory alloy:: Ni2+xMn1-xGa -: art. no. 202508

被引：153

作者：

Biswas, C ^{[1
]}

Rawat, R ^{[1
]}

Barman, SR ^{[1
]}

机构：

[1] UGC, DAE, Consortium Sci Res, Indore 452017, Madhya Pradesh, India

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期

关键词：

D O I：

10.1063/1.1925757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

5% negative magnetoresistance (MR) at room temperature has been observed in bulk Ni2+xMn1-xGa. This indicates the possibility of using Ni2+xMn1-xGa as magnetic sensors. We have measured MR in the ferromagnetic state for different compositions (x = 0-0.2) in the austenitic, premartensitic, and martensitic phases. MR is found to increase with x. While MR for x = 0 varies almost linearly in the austenitic and premartensitic phases, in the martensitic phase it shows a cusplike shape. This has been explained by the changes in twin and domain structures in the martensitic phase. In the austenitic phase, which does not have twin structure, MR agrees with theory based on s-d scattering model. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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