TCAD Device Technology Co-Optimization Workflow for Manufacturable MRAM Technology

被引：2

作者：

Dixit, Hemant ^{[1
]}

Naik, Vinayak Bharat ^{[2
]}

Yamane, Kazutaka ^{[2
]}

Lee, Taeyoung ^{[2
]}

Kwon, Jae-Hyun ^{[2
]}

Behin-Aein, Behtash ^{[3
]}

Soss, Steven ^{[1
]}

Taylor, William J. ^{[1
]}

机构：

[1] GLOBALFOUNDRIES Inc, 400 Stone Break Rd Extens, Malta, NY 12020 USA

[2] GLOBALFOUNDRIES Singapore Pvt Ltd, Singapore, Singapore

[3] GLOBALFOUNDRIES Inc, Santa Clara, CA USA

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

D O I：

10.1109/IEDM13553.2020.9371939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A TCAD device technology co-optimization workflow for MRAM devices is presented using multi-scale modelling. Seamless transfer of magnetic parameters within the workflow allows first-principles MRAM stack design and optimization, offering an end-to-end solution. TCAD DTCO enables stack engineering to meet technology specific design targets in high-volume manufacturing. Impact of etch and integration steps is accurately analyzed using Micromagnetic simulation and physical characterization. These process steps alter STT switching dynamics and their implications on Write Error Rates (WER) are discussed. These results provide critical insight for optimizing the WER at reduced pulse-widths needed by Last Level Cache (LLC) applications.

引用

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