Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy

被引：1

作者：

Cui, Jishi ^{[1
]}

Cao, Dezhong ^{[2
]}

Gao, Qingxue ^{[1
]}

Yang, Xiaokun ^{[1
]}

Liu, Jianqiang ^{[2
]}

Ma, Jin ^{[1
]}

Xiao, Hongdi ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China

[2] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China

来源：

MATERIALS LETTERS | 2017年 / 208卷

基金：

中国国家自然科学基金;

关键词：

Porous materials; GaN; Piezoelectric materials; Porosity; UV-assisted electrochemical etching; NANOPOROUS GAN;

D O I：

10.1016/j.matlet.2017.05.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanoporous (NP) GaN thin films with low nucleation density were fabricated via UV-assisted electrochemical etching approach. Under different applied biases, two NP samples with different porosities were fabricated. Piezoelectric characteristics of the fabricated samples were investigated using piezoresponse force microscopy. It was found that the nanopores have great influence on its piezoelectric characteristics such as weakening of piezoresponse and change of polarization orientation. During the performance of devices, the weakening of piezoresponse should be propitious to the optoelectronic and electronic stabilities of GaN-based devices. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：31 / 34

页数：4

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