N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

被引：6

作者：

Huang, Yong ^{[1
,2
]}

Xu, Jing-Ping ^{[1
]}

Liu, Lu ^{[1
]}

Lai, Pui-To ^{[3
]}

Tang, Wing-Man ^{[4
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[2] Hubei Univ Nationalities, Sch Informat & Engn, Enshi 445000, Peoples R China

[3] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[4] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Ga2O3(Gd2O3) (GGO) interlayer; Ge MOS; interface-state density; stacked gate-dielectric; RAY-PHOTOELECTRON-SPECTROSCOPY; OXIDE-SEMICONDUCTOR CAPACITOR; ELECTRICAL-PROPERTIES; STATES; GAAS; MOSFETS; HFOXNY; TRAPS; FILM; ALON;

D O I：

10.1109/TED.2016.2565691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interfacial and electrical properties of sputtered Ti-incorporated Hf oxynitride on Ga2O3(Gd2O3) (GGO) with or without N-2-plasma treated as an interfacial passivation layer (IPL) for Ge MOS capacitor are compared. It is found that low interface-state density (3.4 x 10(11) cm(-2)eV(-1)), small gate leakage current (2.93 x 10(-5) A/cm(2) at V-g = V-fb + 1 V), small capacitance equivalent thickness (1.09 nm), and large equivalent dielectric constant (26.5) can be achieved for the sample with N-2-plasma-treated GGO IPL. The involved mechanisms lie in the fact that the N-2-plasma-treated GGO IPL can effectively block the interdiffusion of elements and suppress the formation of GeOx interfacial layer.

引用

页码：2838 / 2843

页数：6

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