A low-power 63-GHz CMOS direct injection-locked frequency divider in 0.13-μm CMOS technology

被引：2
|
作者：
Hsu, Wei-Lun [1 ]
Chen, Chang-Zhi [1 ]
Lin, Yo-Sheng [1 ]
机构：
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2008年 / 50卷 / 10期
关键词：
CMOS; direct injection-locked; frequency divider; locking range; LC oscillator; low power;
D O I：
10.1002/mop.23768
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power 63-GHz (V-band) direct injection-locked frequency-divider (ILFD) using standard 0.13-mu m CMOS technology is reported. To reduce power consumption and enhance locking range, a PMOS switch directly coupled to the LC tank (output) of the ILFD is used to replace the traditional tail transistor for injection path. This ILFD architecture also features a very low input capacitance: thus, high operating frequeney of 63 GHz can be achieved. This direct ILFD consumes 5.79 mW with locking range of 1.86 GHz (61.24-63.1 GHz). The chip area was only 0.585 x 0.38 mm(2) excluding the test pads. (C) 2008 Wiley Periodicals, Inc.
引用
收藏
页码：2581 / 2584
页数：4
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