Improving Transient Photoconductance Lifetime Measurements on Ingots with Deeper Photogeneration

被引：1
作者：
Goodarzi, Mohsen [1 ]
Sinton, Ronald A. [2 ]
Macdonald, Daniel [1 ]
机构：
[1] Australian Natl Univ, Res Sch Engn, Canberra, ACT 2601, Australia
[2] Sinton Instruments Inc, Boulder, CO USA
来源：
SILICONPV 2018: THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS | 2018年 / 1999卷
关键词：
QUASI-STEADY-STATE; CARRIER LIFETIMES; SILICON INGOTS; RECOMBINATION;
D O I：
10.1063/1.5049247
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Transient PhotoConductance Decay (PCD) measurements on silicon ingots and blocks with different photo-generation profiles are simulated in this work. The results show that a deeper generation profile, achieved by using long-pass optical filters with longer cut off wavelengths, can improve the accuracy of the transient lifetime measurements by approximately 10% in the lifetime range above 150 mu s under typical measurement conditions. This improvement is due to reduced recombination at the unpassivated surface as the carrier density profiles peak is moved deeper into the bulk. The simulation results are confirmed by comparison with experimental lifetime measurements using three different optical filters on a monocrystalline silicon block.
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页数：8
相关论文
共 19 条
[1]   Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density [J].
Bowden, Stuart ;
Sinton, Ronald A. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)
[2]  
Chung D., 2018, IEEE J PHOTOVOLT, V1-9
[3]   Bulk Lifetimes up to 20 ms Measured on Unpassivated Silicon Discs Using Photoluminescence Imaging [J].
Chung, Daniel ;
Mitchell, Bernhard ;
Goodarzi, Mohsen ;
Sun, Chang ;
Macdonald, Daniel ;
Trupke, Thorsten .
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (02) :444-449
[4]   Measuring and interpreting the lifetime of silicon wafers [J].
Cuevas, A ;
Macdonald, D .
SOLAR ENERGY, 2004, 76 (1-3) :255-262
[5]   Modelling silicon characterisation [J].
Cuevas, Andres .
PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 :94-99
[6]   Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence [J].
Giesecke, J. A. ;
Schubert, M. C. ;
Walter, D. ;
Warta, W. .
APPLIED PHYSICS LETTERS, 2010, 97 (09)
[7]   Harmonically Modulated Luminescence: Bridging Gaps in Carrier Lifetime Metrology Across the PV Processing Chain [J].
Giesecke, Johannes A. ;
Schubert, Martin C. ;
Schindler, Florian ;
Warta, Wilhelm .
IEEE JOURNAL OF PHOTOVOLTAICS, 2015, 5 (01) :313-319
[8]   Determination of Bulk Lifetime and Surface Recombination Velocity of Silicon Ingots From Dynamic Photoluminescence [J].
Giesecke, Johannes A. ;
Sinton, Ronald A. ;
Schubert, Martin C. ;
Riepe, Stephan ;
Warta, Wilhelm .
IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (04) :1311-1318
[9]   Accuracy of Interstitial Iron Measurements on P-Type Multicrystalline Silicon Blocks by Quasi-Steady-State Photoconductance [J].
Goodarzi, Mohsen ;
Sinton, Ronald A. ;
Jin, Hao ;
Zheng, Peiting ;
Chen, Wei ;
Wang, Quanzhi ;
Macdonald, Daniel .
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (05) :1216-1223
[10]  
Goodarzi Mohsen, 2017, PHOT SPEC C PVSC 201
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