Fabrication and measurement of 3D LPF based on coaxial TSV

被引：8
作者：
Wang, Fengjuan [1 ]
Li, He [2 ]
Yu, Ningmei [1 ]
机构：
[1] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Shaanxi, Peoples R China
[2] China Aerosp Sci & Ind Corp, Dept Comp Applicat & Simulat Technol, Inst 2, Beijing 100854, Peoples R China
来源：
ELECTRONICS LETTERS | 2019年 / 55卷 / 02期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
finite element analysis; three-dimensional integrated circuits; low-pass filters; passive filters; CMOS integrated circuits; standard CMOS process; 3D LPF architecture; coaxial TSV; passive low-pass filters; 3D LPF measurement; 3D LPF fabrication; through-silicon via; finite element method; THROUGH-SILICON;
D O I：
10.1049/el.2018.7325
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The implementation of mainstream passive low-pass filters (LPFs) remains a challenge to satisfy the requirements of small size and compatibility with standard CMOS process. Fortunately, the emerging technology of through-silicon via (TSV) offers a possible solution to this issue by developing 3D LPF architecture. A 3D LPF based on coaxial TSV is exploited by fabrication and measurement. The measurement result shows good agreement with that obtained by finite element method.
引用
收藏
页码：102 / +
页数：2
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