Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction

被引：16

作者：

Wei, Hong-Xiang ^{[1
]}

Hickey, Mark C. ^{[2
]}

Anderson, Graham I. R. ^{[2
]}

Han, Xiu-Feng ^{[1
]}

Marrows, Christopher H. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China

[2] Univ Leeds, Sch Phys & Astron, Leeds LS2 9JT, W Yorkshire, England

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.77.132401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A current-induced magnetization switching has been observed in a microscale ring-shaped magnetic tunnel junction having an alumina barrier, which showed a tunneling magnetoresistance ratio of 37% and a resistance-area product of 175 Omega mu m(2). Several metastable magnetization states were observed during field driven switching of this junction. Preparing the junction in one of these metastable states allowed a current-induced switching to take place at current densities 2 orders of magnitude lower than conventional switching values. Micromagnetic modeling indicates that the effect was solely due to Oersted field switching, which explains the markedly different forms of the current- and field-driven hysteresis loops.

引用

页数：4

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